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DDR4Results: 53
Manifakti
Hynix
SAMSUNG
K4AAG165WB-MCPB
16 Gb 1G x 16 2133 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production
3684
K4AAG165WA-BCTD
16 Gb 1G x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production
1
1+46.74600
10+35.05950
30+30.38490
K4A8G085WC-BIWE
8 Gb 1G x 8 3200 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production
3018
1+8.56800
10+7.71120
30+5.99760
K4A8G165WB-BCWE
8 Gb 512M x 16 3200 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production
5283
K4A8G045WB-BCRC
8 Gb 2G x 4 2400 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production
5307
K4A8G165WC-BCTD
8 Gb 512M x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production
20430
1+35.25600
10+26.44200
30+22.91640
K4A4G165WF-BCTD
4 Gb 256M x 16 2666 Mbps 1.2 V 0 ~ 85 °C 96FBGA Mass Production
13600
1+4.58980
10+4.13082
30+3.21286
K4A8G085WC-BITD
8 Gb 1G x 8 2666 Mbps 1.2 V -40 ~ 95 °C 78FBGA Mass Production
23945
1+25.63080
10+19.22310
30+16.66002
K4A8G045WC-BCTD
8 Gb 2G x 4 2666 Mbps 1.2 V 0 ~ 85 °C 78FBGA Mass Production
5043
K4A8G165WC-BCWE
3800
1+8.67000
10+7.80300
30+6.06900
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